JPH0586668B2 - - Google Patents

Info

Publication number
JPH0586668B2
JPH0586668B2 JP59001705A JP170584A JPH0586668B2 JP H0586668 B2 JPH0586668 B2 JP H0586668B2 JP 59001705 A JP59001705 A JP 59001705A JP 170584 A JP170584 A JP 170584A JP H0586668 B2 JPH0586668 B2 JP H0586668B2
Authority
JP
Japan
Prior art keywords
wiring
layer
channel transistor
lsi
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59001705A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60145642A (ja
Inventor
Seiji Niwa
Takashi Saigo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59001705A priority Critical patent/JPS60145642A/ja
Publication of JPS60145642A publication Critical patent/JPS60145642A/ja
Publication of JPH0586668B2 publication Critical patent/JPH0586668B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP59001705A 1984-01-09 1984-01-09 半導体集積回路装置 Granted JPS60145642A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59001705A JPS60145642A (ja) 1984-01-09 1984-01-09 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59001705A JPS60145642A (ja) 1984-01-09 1984-01-09 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS60145642A JPS60145642A (ja) 1985-08-01
JPH0586668B2 true JPH0586668B2 (en]) 1993-12-13

Family

ID=11508964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59001705A Granted JPS60145642A (ja) 1984-01-09 1984-01-09 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS60145642A (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812881B2 (ja) * 1987-07-24 1996-02-07 日本電気株式会社 半導体集積回路
JPH0812883B2 (ja) * 1987-08-25 1996-02-07 富士通株式会社 半導体集積回路
JPH0812882B2 (ja) * 1987-08-25 1996-02-07 富士通株式会社 半導体集積回路
US4851892A (en) * 1987-09-08 1989-07-25 Motorola, Inc. Standard cell array having fake gate for isolating devices from supply voltages
JPH0479371A (ja) * 1990-07-23 1992-03-12 Mitsubishi Electric Corp 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866343A (ja) * 1981-10-16 1983-04-20 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
JPS60145642A (ja) 1985-08-01

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term